Effect of Pseudopotential on Decomposition of Electron Phonon Renormalization

Abstract

Renormalization of band structure was obtained at zero temperature by electron phonon interaction and was called zero point renormalization. When temperature was increased then electron-phonon renormalization was increased due to occupation numbers temperature variations. Zero point renormalization of silicon was calculated. It was found that when temperature was high then band gap decreased. Results of electron-phonon interaction in case of silicon were made for different decay constants. Stability of overlap matrix was found. The band gap was reduced in lowest conduction band. It was also found that there was variation of decomposition of electron-phonon renormalization due to pseudopotential.