Effect of Impurities on Optical and Transport Properties of Semiconducting Devices and Quantum Wires

Abstract

The study of effect of impurities on semiconductors and quantum wires were made. The effect on conductance was increased because of chemical potential transport properties were also influenced by twist angles of bilayer graphene. Thermal conductivity was obtained by the variation of impurities and scattering rates. Fluctuation mode played a peculiar role and changed twist angles to decrease conductivity. The Monte Carlo simulation and Boltzmann transport equation were used for the calculation of results. The analysis showed a role for study of interlayer interaction. In response of microscopic transport mechanism, the conductance Eigen channels were considered for this study.