Impact of Insulator on the Properties of Piezotronic Field Effect Transistors

Abstract

We have studied the effect of insulator transition on field effect transistors based on Piezotronic structure. The effect of polarization on the properties was examined for different semiconducting materials. For this purpose third generation semiconducting materials were used. In the sensing system zinc oxide, gallium nitride and cadmium sulphide were used. The coupling of Piezoelectric produced transport which were able to control the properties of carrier generation. The tunneling effects were utilized for reduction of swing limitation. The quantum field effect affected the limitation of two dimensional cases. Indium Arsenide compound quantum well were used for the study and worked as insulator and affected the properties of field effect transistors. In this process the polarization also played a crucial role in the study. In this study magnetic perturbation were considered for the study of properties of Piezotonic field effect transistors. The field effect transistors fabricated considering these properties produced high performance ability.