Single Donor Transistors with Nanochannels and Role of Dielectric Confinement

Abstract

We have studied Single donor transistors with designed nanochannels in which thetunnel barrier height is enhanced due to dielectric confinement. For single electrontunneling effects the charging energy is significantly large. Which is a first limitingfactor for shallow dopants? At high temperatures, thermally activated transportbecame quickly dominant. We have found that at high temperature operation ofelectron tunneling occurred via a single donor. We have found that the single dopantdevices operating at room temperature paving the way for practical applicationsbased on individual dopant atom in silicon nanodevices. We have also found that innanopatterned channel transistors, single electron tunneling via individual positivedonors was observed at elevated temperatures. The obtained results were found ingood agreement with previously obtained results